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 HSM223C
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-092C (Z) Rev. 3 Features
* Low capacitance, proof against high voltage. * Fast recovery time. * MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM223C Laser Mark A8 Package Code MPAK
Pin Arrangement
3
2
1
(Top View)
1 NC 2 Cathode 3 Anode
HSM223C
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Tj Tstg Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time IR C t rr Min -- -- -- -- -- -- Typ 0.76 0.88 0.97 -- 0.5 -- Max 1.0 1.0 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition I F = 10mA I F = 50mA I F = 100mA VR = 80V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, RL= 50
HSM223C
10
-1
Forward current I F (A)
10
-2
10
10
-5
10
-6
0
0.6 0.8 0.2 0.4 Forward voltage VF (V)
Ta
-4
=7 5C =2 5C Ta =- 25 C
10
-3
Ta
1.0
Fig.1 Forward current Vs. Forward voltage
-4
10 10 Reverse current I R (A)
-5
10 10 10 10 10
-6
Ta = 75C
-7
Ta = 50C Ta = 25C
-8
-9
Ta = 0C Ta = -25C
-10
10
-11
0
60 80 20 40 Reverse voltage VR (V)
100
Fig.2 Reverse current Vs. Reverse voltage
HSM223C
f = 1MHz
10 Capacitance C (pF)
1.0
10
-1
1.0
10 Reverse voltage VR (V)
102
Fig.3 Capacitance Vs. Reverse voltage
HSM223C
Package Dimensions
Unit: mm
0.65 - 0.3
+ 0.1
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
A8
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 NC 2 Cathode 3 Anode
0.3
1.1 - 0.1
+ 0.2
HITACHI Code JEDEC Code EIAJ Code Weight (g)
MPAK(1) -- SC-59A 0.011


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